OSEN OSP100N03T

OSEN · FETs & Power MOSFETs · MPN OSP100N03T

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Specifications

Gate Charge(Qg)40.5nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)490pF
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation115W
RDS(on)3.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.35nF
TypeN-Channel

Technical details

N-Channel 30V 100A 115W Through Hole TO-220AB

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