OSEN OSH9N90

OSEN · FETs & Power MOSFETs · MPN OSH9N90

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Specifications

Gate Charge(Qg)670nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)228pF
Current - Continuous Drain(Id)9A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation155W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)1Ω@10V
Input Capacitance(Ciss)2.78nF
TypeN-Channel

Technical details

N-Channel 900V 9A 155W Through Hole TO-3PNB

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