OSEN · FETs & Power MOSFETs · MPN OSH75N10
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| Output Capacitance(Coss) | 350pF |
|---|---|
| Pd - Power Dissipation | 195W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 65nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 13mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 185pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.1nF |
195W 100V 2V 13mΩ@10V 1 N-channel N-Channel TO-3PNB Single FETs, MOSFETs RoHS