OSEN OSH75N10

OSEN · FETs & Power MOSFETs · MPN OSH75N10

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Specifications

Output Capacitance(Coss)350pF
Pd - Power Dissipation195W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)65nC
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
RDS(on)13mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)185pF
Number1 N-channel
Input Capacitance(Ciss)5.1nF

Technical details

195W 100V 2V 13mΩ@10V 1 N-channel N-Channel TO-3PNB Single FETs, MOSFETs RoHS

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