OSEN OSH50N50

OSEN · FETs & Power MOSFETs · MPN OSH50N50

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Specifications

Gate Charge(Qg)160nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)560pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
RDS(on)70mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)35pF
Number1 N-channel
Input Capacitance(Ciss)6.7nF
TypeN-Channel

Technical details

N-Channel 500V 50A 375W Through Hole TO-3PNB

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