OSEN OSH50N20

OSEN · FETs & Power MOSFETs · MPN OSH50N20

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)690pF
Current - Continuous Drain(Id)50A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.3nF
TypeN-Channel

Technical details

N-Channel 200V 50A 300W Through Hole TO-3PNB

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