OSEN · FETs & Power MOSFETs · MPN OSH4N150
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| Drain to Source Voltage | 1.5kV |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 120pF |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 3.95Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
| Type | N-Channel |
1.5kV 4A 5V 160W 3.95Ω@10V 1 N-channel N-Channel TO-247S Single FETs, MOSFETs RoHS