OSEN · FETs & Power MOSFETs · MPN OSH40N50
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| Gate Charge(Qg) | 155nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 350W |
| Reverse Transfer Capacitance (Crss@Vds) | 550pF |
| RDS(on) | 100mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.5nF |
| Type | N-Channel |
500V 40A 4V 350W 100mΩ@10V 1 N-channel N-Channel TO-3PNB Single FETs, MOSFETs RoHS