OSEN OSH30N65

OSEN · FETs & Power MOSFETs · MPN OSH30N65

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)385pF
Current - Continuous Drain(Id)30A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
RDS(on)250mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-channel
Input Capacitance(Ciss)5.5nF

Technical details

650V 30A 330W Through Hole TO-3PN

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