OSEN OSH30N60

OSEN · FETs & Power MOSFETs · MPN OSH30N60

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Specifications

Gate Charge(Qg)125nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)380pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
RDS(on)210mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Input Capacitance(Ciss)5nF
TypeN-Channel

Technical details

N-Channel 600V 30A 330W Through Hole TO-3PNB

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