OSEN OSH30N50

OSEN · FETs & Power MOSFETs · MPN OSH30N50

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)95nC@10V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)30A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
RDS(on)165mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-channel
Input Capacitance(Ciss)4.3nF
TypeN-Channel

Technical details

500V 30A 4V 330W 165mΩ@10V 1 N-channel N-Channel TO-3PNB Single FETs, MOSFETs RoHS

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