OSEN OSH25N60

OSEN · FETs & Power MOSFETs · MPN OSH25N60

No reviews yet — be the first to review OSEN OSH25N60.

Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)1.25nF
Current - Continuous Drain(Id)25A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation285W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.3nF
TypeN-Channel

Technical details

N-Channel 600V 25A 285W Through Hole TO-3PNB

Related FETs & Power MOSFETs