OSEN OSH25N50

OSEN · FETs & Power MOSFETs · MPN OSH25N50

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)25A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
RDS(on)200mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.5nF
TypeN-Channel

Technical details

N-Channel 500V 25A 300W Through Hole TO-3PNB

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