OSEN · FETs & Power MOSFETs · MPN OSH24N100
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| Gate Charge(Qg) | 185nC |
|---|---|
| Drain to Source Voltage | 1kV |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 650W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 350mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.5nF |
| Type | N-Channel |
N-Channel 1kV 24A 650W Through Hole TO-247H