OSEN OSH24N100

OSEN · FETs & Power MOSFETs · MPN OSH24N100

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Specifications

Gate Charge(Qg)185nC
Drain to Source Voltage1kV
Current - Continuous Drain(Id)24A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation650W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)350mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.5nF
TypeN-Channel

Technical details

N-Channel 1kV 24A 650W Through Hole TO-247H

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