OSEN OSH10N80

OSEN · FETs & Power MOSFETs · MPN OSH10N80

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)45nC@10V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)680mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.15nF
TypeN-Channel

Technical details

N-Channel 800V 10A 160W Through Hole TO-3PNB

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