OSEN · FETs & Power MOSFETs · MPN OSH100N25-OSEN
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| Gate Charge(Qg) | 183nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 1.19nF |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 600W |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| RDS(on) | 24mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.37nF |
| Type | N-Channel |
250V 100A 4.5V 600W 24mΩ@10V 1 N-channel N-Channel TO-3PNB Single FETs, MOSFETs RoHS