OSEN OSE13007D

OSEN · Transistors (BJTs) · MPN OSE13007D

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain30
Pd - Power Dissipation80W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Vce Saturation(VCE(sat))1V

Technical details

400V 30 1 NPN NPN 6A TO-252 Single Bipolar Transistors RoHS

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