OSEN OSD8N65C

OSEN · FETs & Power MOSFETs · MPN OSD8N65C

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Specifications

Gate Charge(Qg)28nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)8A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)1.05Ω@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 650V 8A 40W Surface Mount TO-252

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