OSEN · FETs & Power MOSFETs · MPN OSD80P06T
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| Gate Charge(Qg) | 129nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 550pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| RDS(on) | 20mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.88nF |
P-Channel 60V 80A 120W Surface Mount TO-252