OSEN OSD80P06

OSEN · FETs & Power MOSFETs · MPN OSD80P06

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Specifications

Gate Charge(Qg)129nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)550pF
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)20mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.88nF
TypeP-Channel

Technical details

P-Channel 60V 80A 120W Surface Mount TO-252

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