OSEN OSD7N65

OSEN · FETs & Power MOSFETs · MPN OSD7N65

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)1.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.69nF
TypeN-Channel

Technical details

N-Channel 650V 7A 38W Surface Mount TO-252

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