OSEN OSD65R600

OSEN · FETs & Power MOSFETs · MPN OSD65R600

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)7A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)550pF

Technical details

650V 7A 30W Surface Mount TO-252

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