OSEN OSD65R550

OSEN · FETs & Power MOSFETs · MPN OSD65R550

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)7A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)700pF

Technical details

650V 7A 35W Surface Mount TO-252

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