OSEN OSD50N10G

OSEN · FETs & Power MOSFETs · MPN OSD50N10G

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)50A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)14.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.58nF
TypeN-Channel

Technical details

N-Channel 100V 50A 135W Surface Mount TO-252

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