OSEN OSD4N65

OSEN · FETs & Power MOSFETs · MPN OSD4N65

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)4A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation32W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)2.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)650pF
TypeN-Channel

Technical details

N-Channel 650V 4A 32W Surface Mount TO-252

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