OSEN OSD3N90

OSEN · FETs & Power MOSFETs · MPN OSD3N90

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Specifications

Drain to Source Voltage900V
Gate Charge(Qg)17.5nC@10V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)55pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)3.5pF
RDS(on)4.75Ω@10V
Number1 N-channel
Input Capacitance(Ciss)550pF
TypeN-Channel

Technical details

900V 3A 4V 75W 4.75Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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