OSEN OSD150N10G

OSEN · FETs & Power MOSFETs · MPN OSD150N10G

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Specifications

Gate Charge(Qg)120nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)550pF
Current - Continuous Drain(Id)150A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation95W
RDS(on)4.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)75pF
Number1 N-channel
Input Capacitance(Ciss)3.55nF
TypeN-Channel

Technical details

N-Channel 100V 150A 95W Surface Mount TO-252

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