OSEN OSD10N65

OSEN · FETs & Power MOSFETs · MPN OSD10N65

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)136pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)10.5pF
RDS(on)803mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.57nF
TypeN-Channel

Technical details

N-Channel 650V 10A 45W Surface Mount TO-252

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