OSEN OSD1047

OSEN · Transistors (BJTs) · MPN OSD1047

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO120V
DC Current Gain160
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation100W
Number1 NPN
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))2V

Technical details

Bipolar (BJT) Transistor NPN+PNP 120V 10A 10MHz 100W Through Hole TO-3PNT

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