OSEN OSD100N10G

OSEN · FETs & Power MOSFETs · MPN OSD100N10G

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)580pF
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.505nF
TypeN-Channel

Technical details

N-Channel 100V 100A 150W Surface Mount TO-252

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