OSEN OSC300N10G

OSEN · FETs & Power MOSFETs · MPN OSC300N10G

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Specifications

Gate Charge(Qg)150nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)300A
Output Capacitance(Coss)920pF
Gate Threshold Voltage (Vgs(th))2V;4V
Pd - Power Dissipation400W
RDS(on)1.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)35pF
Number1 N-channel
Input Capacitance(Ciss)12.5nF
TypeN-Channel

Technical details

100V 300A 400W 1.9mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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