OSEN IRFP350PBF

OSEN · FETs & Power MOSFETs · MPN IRFP350PBF

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)95nC
Output Capacitance(Coss)233pF
Current - Continuous Drain(Id)16A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)320mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.285nF
TypeN-Channel

Technical details

N-Channel 400V 16A 190W Through Hole TO-247S

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