OSEN IRFB4227PBF-OSEN

OSEN · FETs & Power MOSFETs · MPN IRFB4227PBF-OSEN

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Specifications

Gate Charge(Qg)410nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)65A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)440pF
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.8nF
TypeN-Channel

Technical details

N-Channel 200V 65A 330W Through Hole TO-220EW

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