OSEN IRFB38N20D

OSEN · FETs & Power MOSFETs · MPN IRFB38N20D

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)40A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)72mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.45nF
TypeN-Channel

Technical details

N-Channel 200V 40A 75W Through Hole TO-220

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