OSEN IRF840

OSEN · FETs & Power MOSFETs · MPN IRF840

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Specifications

Gate Charge(Qg)43nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)9A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)680mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.505nF
TypeN-Channel

Technical details

N-Channel 500V 9A 135W Through Hole TO-220

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