OSEN IRF730

OSEN · FETs & Power MOSFETs · MPN IRF730

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Specifications

Drain to Source Voltage450V
Gate Charge(Qg)38nC
Current - Continuous Drain(Id)6A
Output Capacitance(Coss)170pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation55W
RDS(on)956mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)64pF
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

N-Channel 450V 6A 55W Through Hole TO-220AB

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