OSEN IRF3710PBF

OSEN · FETs & Power MOSFETs · MPN IRF3710PBF

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Specifications

Configuration-
Gate Charge(Qg)60nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)59A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation160W
RDS(on)14mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)35pF
Number1 N-channel
Input Capacitance(Ciss)2.78nF

Technical details

N-Channel 100V 59A 160W Through Hole TO-220AB

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