OSEN D209L

OSEN · Transistors (BJTs) · MPN D209L

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain40
Pd - Power Dissipation130W
Number1 NPN
typeNPN
Current - Collector(Ic)12A
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 400V 12A 130W Through Hole TO-3PNB

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