OSEN 13003

OSEN · Transistors (BJTs) · MPN 13003

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain35
Pd - Power Dissipation30W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor NPN 400V 2A 5MHz 30W Through Hole TO-126

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