orisilicon · FETs & Power MOSFETs · MPN OSM7N65B
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| Output Capacitance(Coss) | 93pF |
|---|---|
| Pd - Power Dissipation | - |
| Configuration | - |
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 26nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -40℃~+85℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.5pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.13nF |
650V 2V 1.2Ω@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS