orisilicon OSM7N65A

orisilicon · FETs & Power MOSFETs · MPN OSM7N65A

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Specifications

Output Capacitance(Coss)93pF
Pd - Power Dissipation-
Configuration-
Gate Charge(Qg)24nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Operating Temperature --40℃~+85℃
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)5.5pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.13nF

Technical details

N-Channel 650V 7A Through Hole TO-220-FB

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