orisilicon OSM4N90SJ

orisilicon · FETs & Power MOSFETs · MPN OSM4N90SJ

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Specifications

Drain to Source Voltage900V
Gate Charge(Qg)10.3nC@10V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --40℃~+85℃
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)1.4Ω@10V
Input Capacitance(Ciss)450pF
TypeN-Channel

Technical details

N-Channel 900V 4.2A Through Hole TO-220FB

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