orisilicon · FETs & Power MOSFETs · MPN OSM2N150
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| Output Capacitance(Coss) | 50pF |
|---|---|
| Pd - Power Dissipation | - |
| Gate Charge(Qg) | 28nC |
| Configuration | - |
| Drain to Source Voltage | 1.5kV |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -40℃~+125℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 11.5pF |
| RDS(on) | 13Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 580pF |
1.5kV 3V 13Ω@10V 1 N-channel N-Channel TO-220-FB Single FETs, MOSFETs RoHS