orisilicon OSM2N150

orisilicon · FETs & Power MOSFETs · MPN OSM2N150

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Specifications

Output Capacitance(Coss)50pF
Pd - Power Dissipation-
Gate Charge(Qg)28nC
Configuration-
Drain to Source Voltage1.5kV
Current - Continuous Drain(Id)-
Operating Temperature --40℃~+125℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)11.5pF
RDS(on)13Ω@10V
Number1 N-channel
Input Capacitance(Ciss)580pF

Technical details

1.5kV 3V 13Ω@10V 1 N-channel N-Channel TO-220-FB Single FETs, MOSFETs RoHS

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