orisilicon · FETs & Power MOSFETs · MPN OSM1N1P65
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| Output Capacitance(Coss) | - |
|---|---|
| Pd - Power Dissipation | - |
| Configuration | - |
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -40℃~+85℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | - |
650V 2V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS