ORIENTAL SEMI · FETs & Power MOSFETs · MPN OSG65R580FF
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| Gate Charge(Qg) | 9.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 38.3pF |
| Current - Continuous Drain(Id) | 8A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 28W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.47pF |
| RDS(on) | 580mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 464pF |
650V 8A 4V 28W 580mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS