ORIENTAL SEMI · FETs & Power MOSFETs · MPN OSG65R580DEF
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| Gate Charge(Qg) | 12.4nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| RDS(on) | 580mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 587pF |
650V 8A 4V 63W 580mΩ@10V TO-252-2 Single FETs, MOSFETs RoHS