ORIENTAL SEMI OSG65R380DEF

ORIENTAL SEMI · FETs & Power MOSFETs · MPN OSG65R380DEF

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)761.3pF
Vgs±30V

Technical details

N-Channel 650V 11A Surface Mount TO-252

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