ORIENTAL SEMI · FETs & Power MOSFETs · MPN OSG65R360DEF
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| Gate Charge(Qg) | 18.8nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 901pF |
N-Channel 650V 12A Surface Mount TO-252