ORIENTAL SEMI · FETs & Power MOSFETs · MPN OSG65R290DEF
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| Gate Charge(Qg) | 21nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.1pF |
| RDS(on) | 290mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 1.079nF |
| Type | N-Channel |
650V 15A 3.7V 104W 290mΩ@10V N-Channel TO-252-2 Single FETs, MOSFETs RoHS