ORIENTAL SEMI · FETs & Power MOSFETs · MPN OSG65R1K4AF
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| Gate Charge(Qg) | 6.7nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 28.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
650V 4A 4V 28.4W 1.4Ω@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS