ORIENTAL SEMI · FETs & Power MOSFETs · MPN OSG60R580FTF
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| Gate Charge(Qg) | 8.7nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 41.7pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 26W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF |
| RDS(on) | 580mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 410.8pF |
600V 8A 3.9V 26W 580mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS